Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Removal of imaged layers
Reexamination Certificate
1999-09-03
2003-01-21
Duda, Kathleen (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Removal of imaged layers
C430S330000, C134S001000, C134S001300
Reexamination Certificate
active
06509141
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to the field of removal of photoresist and photoresist residue from semiconductor wafers. More particularly, the present invention relates to the field of removal of photoresist and photoresist residue from semiconductor wafers using supercritical carbon dioxide.
BACKGROUND OF THE INVENTION
Manufacture of semiconductor devices requires application and subsequent removal of a photoresist chemical from a surface of a semiconductor wafer. The removal of the photoresist chemical, commonly known as stripping, may be immediately preceded by a plasma ashing, etching, or other semiconductor manufacturing step. These steps can degrade or carbonize the photoresist chemical and leave a photoresist residue that difficult to remove by current stripping methods. The current stripping methods require that the wafers be dipped into baths of commericially available chemical mixtures known as strippers. The baths may employ heat or ultrasonic augmentation. Typically, the baths employ immersion times of twenty to thirty minutes to achieve complete removal of photoresist or photoresist residue from the wafer surface.
What is needed is a more effective method of removing photoresist.
What is needed is a more effective method of removing photoresist residue.
What is needed is a more effective method of removing photoresist.
What is needed is a more effective method of removing photoresist residue.
SUMMARY OF THE INVENTION
The present invention is a method of removing a photoresist or a photoresist residue from a semicondutor substrate. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced into the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented.
REFERENCES:
patent: 2617719 (1952-11-01), Stewart
patent: 3890176 (1975-06-01), Bolon
patent: 3900551 (1975-08-01), Bardoncelli et al.
patent: 4029517 (1977-06-01), Rand
patent: 4091643 (1978-05-01), Zucchini
patent: 4219333 (1980-08-01), Harris
patent: 4341592 (1982-07-01), Shortes et al.
patent: 4474199 (1984-10-01), Blaudszun
patent: 4475993 (1984-10-01), Blander et al.
patent: 4601181 (1986-07-01), Privat
patent: 4693777 (1987-09-01), Hazano et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4788043 (1988-11-01), Kagiyama et al.
patent: 4838476 (1989-06-01), Rahn
patent: 4865061 (1989-09-01), Fowler et al.
patent: 4877530 (1989-10-01), Moses
patent: 4879004 (1989-11-01), Oesch et al.
patent: 4923828 (1990-05-01), Gluck et al.
patent: 4924892 (1990-05-01), Kiba et al.
patent: 4933404 (1990-06-01), Beckman et al.
patent: 4944837 (1990-07-01), Nishikawa et al.
patent: 4960140 (1990-10-01), Ishijima et al.
patent: 4983223 (1991-01-01), Gessner
patent: 5011542 (1991-04-01), Weil
patent: 5013366 (1991-05-01), Jackson et al.
patent: 5068040 (1991-11-01), Jackson
patent: 5105556 (1992-04-01), Kurokawa et al.
patent: 5143103 (1992-09-01), Basso et al.
patent: 5158704 (1992-10-01), Fulton et al.
patent: 5174917 (1992-12-01), Monzyk
patent: 5185058 (1993-02-01), Cathey, Jr.
patent: 5185296 (1993-02-01), Morita et al.
patent: 5193560 (1993-03-01), Tanaka et al.
patent: 5201960 (1993-04-01), Starov
patent: 5213619 (1993-05-01), Jackson et al.
patent: 5215592 (1993-06-01), Jackson
patent: 5225173 (1993-07-01), Wai
patent: 5236602 (1993-08-01), Jackson
patent: 5237824 (1993-08-01), Pawliszyn
patent: 5238671 (1993-08-01), Matson et al.
patent: 5250078 (1993-10-01), Saus et al.
patent: 5261965 (1993-11-01), Moslehi
patent: 5266205 (1993-11-01), Fulton et al.
patent: 5267455 (1993-12-01), Dewees et al.
patent: 5269815 (1993-12-01), Schlenker et al.
patent: 5274129 (1993-12-01), Natale et al.
patent: 5288333 (1994-02-01), Tanaka et al.
patent: 5290361 (1994-03-01), Hayashida et al.
patent: 5294261 (1994-03-01), McDermott et al.
patent: 5298032 (1994-03-01), Schlenker et al.
patent: 5304515 (1994-04-01), Morita et al.
patent: 5306350 (1994-04-01), Hoy et al.
patent: 5312882 (1994-05-01), DeSimone et al.
patent: 5313965 (1994-05-01), Palen
patent: 5316591 (1994-05-01), Chao et al.
patent: 5334332 (1994-08-01), Lee
patent: 5334493 (1994-08-01), Fujita et al.
patent: 5337446 (1994-08-01), Smith et al.
patent: 5339844 (1994-08-01), Stanford, Jr. et al.
patent: 5352327 (1994-10-01), Witowski
patent: 5355901 (1994-10-01), Mielnik et al.
patent: 5356538 (1994-10-01), Wai et al.
patent: 5368171 (1994-11-01), Jackson
patent: 5370740 (1994-12-01), Chao et al.
patent: 5370742 (1994-12-01), Mitchell et al.
patent: 5377705 (1995-01-01), Smith, Jr. et al.
patent: 5401322 (1995-03-01), Marshall
patent: 5403621 (1995-04-01), Jackson et al.
patent: 5412958 (1995-05-01), Iliff et al.
patent: 5417768 (1995-05-01), Smith, Jr. et al.
patent: 5456759 (1995-10-01), Stanford, Jr. et al.
patent: 5470393 (1995-11-01), Fukazawa
patent: 5474812 (1995-12-01), Truckenmuller et al.
patent: 5482564 (1996-01-01), Douglas et al.
patent: 5486212 (1996-01-01), Mitchell et al.
patent: 5494526 (1996-02-01), Paranjpe
patent: 5500081 (1996-03-01), Bergman
patent: 5501761 (1996-03-01), Evans et al.
patent: 5505219 (1996-04-01), Lansberry et al.
patent: 5509431 (1996-04-01), Smith, Jr. et al.
patent: 5514220 (1996-05-01), Wetmore et al.
patent: 5522938 (1996-06-01), O'Brien
patent: 5526834 (1996-06-01), Mielnik et al.
patent: 5533538 (1996-07-01), Marshall
patent: 5547774 (1996-08-01), Gimzewski et al.
patent: 5550211 (1996-08-01), DeCrosta et al.
patent: 5580846 (1996-12-01), Hayashida et al.
patent: 5589105 (1996-12-01), DeSimone et al.
patent: 5632847 (1997-05-01), Ohno et al.
patent: 5635463 (1997-06-01), Muraoka
patent: 5637151 (1997-06-01), Schulz
patent: 5641887 (1997-06-01), Beckman et al.
patent: 5656097 (1997-08-01), Olesen et al.
patent: 5665527 (1997-09-01), Allen et al.
patent: 5669251 (1997-09-01), Townsend et al.
patent: 5676705 (1997-10-01), Jureller et al.
patent: 5679169 (1997-10-01), Gonzales et al.
patent: 5679171 (1997-10-01), Saga et al.
patent: 5683473 (1997-11-01), Jureller et al.
patent: 5683977 (1997-11-01), Jureller et al.
patent: 5688879 (1997-11-01), DeSimone
patent: 5700379 (1997-12-01), Biebl
patent: 5726211 (1998-03-01), Hedrick et al.
patent: 5739223 (1998-04-01), DeSimone
patent: 5783082 (1998-07-01), DeSimone et al.
patent: 5798438 (1998-08-01), Sawan et al.
patent: 5804607 (1998-09-01), Hedrick et al.
patent: 5866005 (1999-02-01), DeSimone et al.
patent: 5868856 (1999-02-01), Douglas et al.
patent: 5868862 (1999-02-01), Douglas et al.
patent: 5872257 (1999-02-01), Beckman et al.
patent: 5873948 (1999-02-01), Kim
patent: 5881577 (1999-03-01), Sauer et al.
patent: 5908510 (1999-06-01), McCullough et al.
patent: 5944996 (1999-08-01), DeSimone et al.
patent: 5976264 (1999-11-01), McCullough et al.
patent: 5980648 (1999-11-01), Adler
patent: 6017820 (2000-01-01), Ting et al.
patent: 6024801 (2000-02-01), Wallace et al.
patent: 0 283 740 (1988-09-01), None
patent: 0 391 035 (1990-10-01), None
patent: 0 518 653 (1992-12-01), None
patent: 0 536752 (1993-04-01), None
patent: 0 572 913 (1993-12-01), None
patent: 0 620 270 (1994-10-01), None
patent: 0 711 864 (1996-05-01), None
patent: 0 726 099 (1996-08-01), None
patent: 0 836 895 (1998-04-01), None
patent: 60-192333 (1985-09-01), None
patent: 1045131 (1989-02-01), None
patent: 7142333 (1995-06-01), None
patent: 727711 (1996-02-01), None
patent: 8222508 (1996-08-01), None
patent: WO 90/06189 (1990-06-01), None
patent: WO 90/13675 (1990-11-01), None
patent: WO 93/14255 (1993-07-01), None
patent: WO 93/14259 (1993-07-01), None
patent: WO 93/20116 (1993-10-01), None
patent: WO 96/27704 (1996-09-01), None
patent: WO 99/49998 (1999-10-01), None
Takahashi, D., “Los Alomos Lab finds way to cut chip toxic waste,” Wall Street J
Duda Kathleen
Haverstock & Owens LLP
Tokyo Electron Limited
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