Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Patent
1996-03-29
1999-12-07
Mulpuri, Savitri
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
438906, 438974, 134 13, B08B 312
Patent
active
059983051
ABSTRACT:
The invention is a method of removing materials such as carbon and metallic elements from a substrate surface via heating in an atmosphere of molecular chlorine and steam. In a preferred embodiment, carbon residue is removed from the surface of a Si or GaAs substrate material.
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Albaugh Kevin Bruce
Holmer Arthur Edward
Litwin Michael Mark
Follett Robert J.
Mulpuri Savitri
Praxair Technology Inc.
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