Removal of carbon from substrate surfaces

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

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438906, 438974, 134 13, B08B 312

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active

059983051

ABSTRACT:
The invention is a method of removing materials such as carbon and metallic elements from a substrate surface via heating in an atmosphere of molecular chlorine and steam. In a preferred embodiment, carbon residue is removed from the surface of a Si or GaAs substrate material.

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