Removal of carbon from an insulative layer using ozone

Details Removal of carbon from an insulative layer using ozone Removal of carbon from an insulative layer using ozone

2005-09-06

2005-09-06

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C438S788000, C438S790000

Reexamination Certificate

active

06939817

ABSTRACT:
A method of removing residual carbon deposits from a flowable, insulative material. The flowable, insulative material comprises silicon, carbon, and hydrogen and is a flowable oxide material or a spin-on, flowable oxide material. The residual carbon deposits are removed from the flowable, insulative material by exposing the material to ozone. The flowable, insulative material is used to form an insulative layer in a trench located on a semiconductor substrate.

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International Search Report dated Oct. 12, 2004 7 pages.

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