Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Involving nuclear transmutation doping
Reexamination Certificate
2009-06-12
2011-12-27
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Involving nuclear transmutation doping
C438S692000, C438S740000, C257SE21170, C257SE21006, C257SE21270, C257SE21054, C257SE21134, C257SE21267, C257SE21304, C257SE21311, C257SE21329
Reexamination Certificate
active
08084339
ABSTRACT:
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment, a semiconductor processing apparatus includes a processing chamber, a load lock coupled to the processing chamber via a transfer port, a wafer pedestal disposed in the load lock and configured to support a wafer in the load lock, a remote plasma source configured to provide a remote plasma to the load lock, and an ion filter disposed between the remote plasma source and the wafer pedestal.
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Antonelli George Andrew
Buckalew Bryan L.
O'Loughlin Jennifer
Rangarajan Vishwanathan
Schravendijk Bart Van
Nhu David
Novellus Systems Inc.
Weaver Austin Villeneuve & Sampson LLP
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