Reliable sustained self-sputtering

Details Reliable sustained self-sputtering Reliable sustained self-sputtering

1997-11-25

1999-11-02

Gupta, Yogendra

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429803, 20429802, 20429813, 20419213, 118723MA, C23C 1400

Patent

active

059763345

ABSTRACT:
A plasma physical vapor deposition (PVD) reactor configured for self sustained sputtering in which no sputtering working gas is required but the sputtered ions are sufficient to sustain the sputtering from the target. According to the invention, the power applied to the sputtering target is monitored to determine if sustained self-sputtering is being maintained. If the electrical parameters or other parameters in the chamber indicate that the self-sustained plasma has collapsed, a reinitialization procedure is begun including: admitting a working gas such as argon into the chamber; again exciting the plasma; and then effectively eliminating the working gas.

REFERENCES:
patent: 5126028 (1992-06-01), Hurwitt et al.
patent: 5169509 (1992-12-01), Latz et al.
patent: 5667645 (1997-09-01), Leiphart et al.

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