Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-06-05
1996-06-11
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257757, 257761, 257768, H01L 2941, H01L 2943
Patent
active
055258379
ABSTRACT:
A method for manufacturing an ohmic contact on a semiconductor device, as disclosed herein, includes a first step of etching a via through a non-conductive layer formed over a partially fabricated version of the semiconductor device. This step exposes a region of a device element such as a source, gate electrode, etc. Next, an ohmic contact layer including tantalum and silicon is deposited over the partially fabricated device and in the vias by sputtering in an argon atmosphere. Thereafter, and in the same processing apparatus, a barrier layer including a tantalum silicon nitride is deposited over the ohmic contact layer. Then an aluminum alloy metallization layer is directly deposited on the partially fabricated device at a temperature of at least 650.degree. C. At this deposition temperature, the metallization layer conformally fills the via, thereby producing a stable, uniform contact.
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Brown Peter Toby
LSI Logic Corporation
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