Reliable metallization with barrier for semiconductors

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257757, 257761, 257768, H01L 2941, H01L 2943

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active

055258379

ABSTRACT:
A method for manufacturing an ohmic contact on a semiconductor device, as disclosed herein, includes a first step of etching a via through a non-conductive layer formed over a partially fabricated version of the semiconductor device. This step exposes a region of a device element such as a source, gate electrode, etc. Next, an ohmic contact layer including tantalum and silicon is deposited over the partially fabricated device and in the vias by sputtering in an argon atmosphere. Thereafter, and in the same processing apparatus, a barrier layer including a tantalum silicon nitride is deposited over the ohmic contact layer. Then an aluminum alloy metallization layer is directly deposited on the partially fabricated device at a temperature of at least 650.degree. C. At this deposition temperature, the metallization layer conformally fills the via, thereby producing a stable, uniform contact.

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