Reliable memory cell

Details Reliable memory cell Reliable memory cell

2009-03-11

2011-10-11

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C257S213000, C257SE21409, C257SE29309

Reexamination Certificate

active

08034670

ABSTRACT:
A method of forming a semiconductor device is presented. A substrate prepared with a second gate is provided. The second gate is processed to form a second gate with a rounded corner and a first gate is formed on the substrate. The first gate is adjacent to and overlaps a portion of the second gate and the rounded corner.

REFERENCES:
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6284598 (2001-09-01), Kelley et al.
patent: 6429054 (2002-08-01), Krishnan et al.
patent: 2002/0098653 (2002-07-01), Flagan et al.

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