Reliable interconnect via structures and methods for making the

Details Reliable interconnect via structures and methods for making the Reliable interconnect via structures and methods for making the

1997-07-25

1999-11-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438633, 438688, 438692, 438622, 438927, H01L 214763

Patent

active

059813784

ABSTRACT:
Disclosed is an aluminum filled via hole for use in a semiconductor interconnect structure. The aluminum filled via hole of the semiconductor interconnect structure includes a first patterned metallization layer lying over a first dielectric layer. A second dielectric layer overlying the first patterned metallization layer and the first dielectric layer. An aluminum filled via hole defined through the second dielectric layer and in contact with the first patterned metallization layer. The aluminum filled via hole has an electromigration barrier cap over a topmost portion of the aluminum filled via hole that is substantially level with the second dielectric layer. The electromigration barrier cap having a thickness of between about 500 angstroms and about 2,500 angstroms.

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