Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2007-12-25
2007-12-25
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S256000, C257S272000, C257S274000, C257S409000, C257SE29314
Reexamination Certificate
active
10956863
ABSTRACT:
The present invention provides a high-voltage junction field effect transistor (JFET), a method of manufacture and an integrated circuit including the same. One embodiment of the high-voltage junction field effect transistor (JFET) (300) includes a well region (320) of a first conductive type located within a substrate (318) and a gate region (410) of a second conductive type located within the well region (320), the gate region (410) having a length and a width. This embodiment further includes a source region (710) and a drain region (715) of the first conductive type located within the substrate (318) in a spaced apart relation to the gate region (410) and a doped region (810) of the second conductive type located in the gate region (410) and extending along the width of the gate region (410). In place of or addition to the doped region (810), the high-voltage junction field effect transistor (JFET) (300) may includes a conductive field plate (920) located over and extending along the width of the gate region (410).
REFERENCES:
patent: 4322738 (1982-03-01), Bell et al.
patent: 4407005 (1983-09-01), Bell et al.
patent: 4914491 (1990-04-01), Vu
patent: 5068705 (1991-11-01), Tran
patent: 5118632 (1992-06-01), Schrantz
patent: 5382535 (1995-01-01), Malhi et al.
patent: 5973341 (1999-10-01), Letavic et al.
patent: 2004/0036115 (2004-02-01), Disney
Chatterjee Tathagata
Chen Kaiyuan
Merchant Steve
Trogolo Joe
Brady III W. James
Cruz Leslie Pilar
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Reliable high-voltage junction field effect transistor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reliable high-voltage junction field effect transistor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reliable high-voltage junction field effect transistor and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3865856