Reliability test method for a ferroelectric memory device

Details Reliability test method for a ferroelectric memory device Reliability test method for a ferroelectric memory device

2007-04-10

2007-04-10

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Testing

C365S145000

Reexamination Certificate

active

11228317

ABSTRACT:
A reliability test method for a ferroelectric memory device having a ferroelectric capacitor evaluates, under acceleration conditions (acceleration temperature T2and test time t2), whether or not life of retention characteristics of the ferroelectric memory device is guaranteed under actual use conditions (guarantee temperature T1and guarantee time t1). The method includes the step of determining test time t2that is required to evaluate whether the life of the retention characteristics is guaranteed or not, based on temperature dependence of change with time of a bit line voltage that is generated when data written to the ferroelectric memory device is read.

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