Reliability of metal leads in high speed LSI semiconductors usin

Details Reliability of metal leads in high speed LSI semiconductors usin Reliability of metal leads in high speed LSI semiconductors usin

1996-05-16

1997-10-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257632, 257640, 257752, 257763, 257773, 257774, H01L 2358, H01L 2348

Patent

active

056751877

ABSTRACT:
A semiconductor device (and method of manufacturing thereof) having metal leads (114+130) with improved reliability, comprising metal leads (114+130) on a substrate 112, a low-dielectric constant material (116) at least between the metal leads (114+130), and dummy vias (122+134) in contact with the metal leads (114+130). Heat from the metal leads (114+130) is transferable to the dummy vias (122+134), and the dummy vias (122+134) are capable of conducting away the heat. The low-dielectric constant material (116) may have a dielectric constant of less than about 3.5. An advantage of the invention is to improve reliability of metal leads in circuits using low-dielectric constant materials, especially in scaled-down circuits that are compact in the horizontal direction.

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patent: 5519250 (1996-05-01), Numata

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