Reliability based characterization using bisection

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C703S019000

Reexamination Certificate

active

07131088

ABSTRACT:
In accordance with the present invention there is provided a method for determining an optimized parameter for a circuit simulation. A circuit path for the simulation is determined, and maximum and minimum optimization parameters are decided. Next, the circuit path is simulated using the maximum optimization parameter. The circuit path is simulated using the minimum optimization parameter and a primary criteria parameter is also calculated. The simulations are compared to determine whether the same status (both succeed or both fail) is generated for both the minimum optimization parameter and the maximum optimization parameter. If the simulations do not indicate the same status, then the optimization parameter is recalculated and the circuit is simulated until the primary criteria parameter converges to a prescribed value.

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patent: 2003/0093763 (2003-05-01), McConaghy

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