Semiconductor device manufacturing: process – Germanium or silicon or ge-si on iii-v
Reexamination Certificate
2005-02-15
2005-02-15
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Germanium or silicon or ge-si on iii-v
C438S311000
Reexamination Certificate
active
06855649
ABSTRACT:
A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGexbuffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 106cm2. The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGexlayer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGexinterface, parallel to the Si(001) surface.
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Christiansen Silke H.
Chu Jack O.
Grill Alfred
Mooney Patricia M.
Nhu David
Trepp, Esq. Robert M.
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