Relaxed SiGe films by surfactant mediation

Details Relaxed SiGe films by surfactant mediation Relaxed SiGe films by surfactant mediation

2006-02-07

2006-02-07

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C117S090000

Reexamination Certificate

active

06995076

ABSTRACT:
A metallic surfactant, e.g., Sb, Bi, As, or atomic hydrogen is used to grow a high quality, relaxed, relatively thin SiGe buffer having a very smooth surface and a very low threading dislocation density, on which high-quality films are epitaxially grown for various applications.

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