Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2011-06-28
2011-06-28
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257SE29081, C438S938000
Reexamination Certificate
active
07968911
ABSTRACT:
A crystalline wafer comprising of a support substrate, a first layer and an interface layer. The first layer is of a first material in a relaxed state having a lattice parameter that is substantially equal to the nominal lattice parameter of the first material. The interface layer is in an at least partially molten state disposed between the support substrate and the first layer. The first material is preferably silicon germanium, and the interface layer includes germanium in a higher concentration than that of first material.
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Landau Matthew C
Luke Daniel
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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