Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-10-23
2000-04-25
Dinh, Son T.
Static information storage and retrieval
Floating gate
Particular biasing
3651852, 36518523, 365226, G11C 1604
Patent
active
060551860
ABSTRACT:
A technique for regulating a negative voltage charge pump to induce Fowler-Nordheim tunneling in floating gate cells controls applied bias to compensate for variations in the supply potential VDD, temperature, and the gate coupling ratio (GCR) or other characteristics of the memory cells which depend on manufacturing processes. A supply circuit for a negative voltage includes a voltage regulator that is coupled to the negative voltage source to maintain the negative voltage at a regulated level. The regulator includes an element that establishes the regulated level according to the manufacturing processes and temperature of the device. The regulator also comprises a circuit which establishes the regulated level in response to the supply voltage. Thus, where the negative voltage generator is utilized in a floating gate memory device, the element that establishes the regulated level according to manufactured processes and temperatures comprises a floating gate transistor manufactured according to the same processes as the non-volatile memory cells in the array on the device.
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Hung Chun-Hsiung
Liu Yin-Shang
Yang Hao-Hsiung
Dinh Son T.
Macronix International Co. Ltd.
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