Refreshing wafers having low-k dielectric materials

Details Refreshing wafers having low-k dielectric materials Refreshing wafers having low-k dielectric materials

2007-04-24

2007-04-24

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Repair or restoration

C438S750000, C438S786000, C438S911000

Reexamination Certificate

active

11037647

ABSTRACT:
A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface is immersed in an etching solution having HF and H2SO4to etch the low-k dielectric layer. The etched surface is exposed to at least one of (i) an etching solution having H2SO4and H2O2, and (ii) an RF or microwave energized oxygen-containing gas, to remove the low-k dielectric layer from the wafer.

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