Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1991-01-16
1993-12-14
LaRoche, Eugene R.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365222, 36523006, G11C 1122, G11C 700
Patent
active
052709671
ABSTRACT:
The endurance of ferroelectric capacitors can be extended by refreshing the ferroelectric material. The ferroelectric material is refreshed by impressing a voltage across the ferroelectric capacitor, which voltage is higher than that which the capacitor experiences during normal operation. A memory array having ferroelectric capacitive cells can be refreshed by first reading the memory cells, temporarily storing the data in associated sense amplifiers, refreshing the memory cells by impressing a higher-than-normal voltage across the ferroelectric cell capacitors, then rewriting the temporarily stored data back into the memory cells. Refresh circuits connected between the drive line and bit line common to a number of cells are driven with voltages which are higher than the memory cell experiences during normal read operations. A V.sub.cc to ground pulse train is applied to the drive line, while an inverted waveform thereof is applied to the bit line during refresh operations.
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Jaffe James M.
Moazzami Reza
Glembocki Christopher R.
LaRoche Eugene R.
National Semiconductor Corporation
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