Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-08-09
2005-08-09
Lam, David (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S210130, C365S189011
Reexamination Certificate
active
06928016
ABSTRACT:
In the refresh type semiconductor memory device having a plurality of refresh type memory cells, for internally performing a refresh operation without an external command together with an input and output operation of data; the refresh type semiconductor memory device includes a refresh circuit having a compulsive refresh request signal generator that disables a refresh request cut-off signal, in response to a signal responding to an active transition of a write enable signal, and a dummy refresh signal generated in a read operation, so as to prevent a refresh fail causable in a consecutive write operation, whereby improving a write cycle time and minimizing a refresh fail at a high speed operation.
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patent: 2003/0112687 (2003-06-01), Tang
Kim Song-Won
Nam Kyung-Woo
Lam David
Marger & Johnson & McCollom, P.C.
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