Refresh system for multi-bank semiconductor memory

Details Refresh system for multi-bank semiconductor memory Refresh system for multi-bank semiconductor memory

1985-10-31

1987-09-01

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Data refresh

365189, G11C 1300

Patent

active

046913033

ABSTRACT:
Refresh signals for a multiple semiconductor MOS bank memory are implemented with a refresh counter that supplies 15.6 microseconds refresh pulses so that one row of 128 row of memory bank, or of each of a group of memory banks, may be refreshed on a sequential, stepped-through basis. The occurrence of each refresh pulse is effective to refresh one row or a group of rows, providing that refresh lock-out logic does not prevent the refresh pulses signals from being applied to the memory banks. An up/down counter is initially filled to a count of eight, and counts toward zero once each time a refresh pulse occurs and the memory is busy. As long as the count has not reached zero the lock-out logic is effective, but when a count of zero occurs refresh of each new row in the sequence occurs at the 15.6 microsecond rate until the memory is no longer busy; at which time a burst of eight count up pulses is supplied to the up/down counter, and eight new rows are rapidly refreshed at 450 nanosecond intervals. If the memory becomes not busy for a short period of time, such that the entire group of eight refreshes has not been completed, the counter 96 will stop at an intermediate level (between counts of "0" and "8") and will continue honoring priority requests.

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