Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-02-15
2005-02-15
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S185250, C365S189040
Reexamination Certificate
active
06856568
ABSTRACT:
A multi-bit-per-cell non-volatile memory performs refresh operations that move data to different physical storage locations. The movement of data may extend the life of a non-volatile memory by avoiding repetitive erasing and writing of the same data value in the same memory cell. A memory mapping circuit in the memory adjusts for different storage configuration that the refresh operations create. In a particular embodiment, a refresh operation swaps the physical locations of two data blocks, and alternates between two mappings of physical addresses to logical addresses.
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Millers David T.
Multi Level Memory Technology
Nguyen Van Thu
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