Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-02-21
2006-02-21
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230040
Reexamination Certificate
active
07002867
ABSTRACT:
An IC having an array of memory cells that can be accessed through two different ports is described. Read/write operation is performed through one of the ports. The refresh of the memory cell is performed through the other port. In one embodiment, the other port is only used internally to the memory array.
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Sakurai et al., “Transparent-Refresh DRAM (TReD) Using Dual-Port DRAM Cell”, IEEE 1998 Custom Integrated Circuits Conference, May 16-19, 1998, p. 4.3.1-4.3.4, Rochester, New York.
Horizon IP Pte Ltd
Infineon Technologies Aktiengesellschaft
Le Thong Q.
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