Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-05-17
2005-05-17
Le, Thong Q. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S197000
Reexamination Certificate
active
06894942
ABSTRACT:
A refresh control circuit and a method for refreshing control of a semiconductor memory device are described. The refresh control circuit includes a sense amplifier control circuit configured to generate a sense amplifier driving signal by selectively applying a first delay time and a second delay time (first delay time+third delay time) in response to a sense amplifier enable signal and a refresh command signal (or refresh fail detect signal), and a sense amplifier driver configured to output a sense amplifier driving voltage by applying the first delay time or the second delay time according to a mode.
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Hynix / Semiconductor Inc.
Le Thong Q.
Marshall & Gerstein & Borun LLP
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