Refresh cell for a random access memory

Details Refresh cell for a random access memory Refresh cell for a random access memory

1987-09-03

1989-02-14

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Data refresh

365203, 307578, G11C 700, H03K 17687

Patent

active

048051527

ABSTRACT:
A refresh cell of the type utilized for recharging or "refreshing" data stored in a storage element of a random access memory includes a first field effect transistor (FET) having its drain connected to a supply voltage, its source connected to the drain of a second FET and its gate connected to a first side of a capacitor. The second FET has its drain connected to the source of the first FET, its source connected to a column line of a random access memory and its gate connected to receive a row line signal from the random access memory. The capacitor has its first side connected both to the gate of the first FET and to a first side of a diffused resistive element. The second side of the capacitor is connected to receive a pump signal. The second end of the nonlinear resistor is connected to the source-drain interconnection of the two FETs.

REFERENCES:
patent: 3449683 (1969-06-01), Gane
patent: 4610003 (1986-09-01), Natori
patent: 4689495 (1987-08-01), Liu
patent: 4691304 (1987-09-01), Hori et al.

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