Refractory susceptors for epitaxial deposition apparatus

Metal working – Barrier layer or semiconductor device making

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118728, 118729, 437925, C23C 1600

Patent

active

051215314

ABSTRACT:
A hollow graphite susceptor for supporting semiconductor substrates during processing in epitaxial reactor systems. The susceptor has reduced wall thickness to provide lower thermal mass for rapid heating and high wafer throughput. Early failure of this thin-walled susceptor is avoided by providing a raised reinforcing boss on its interior surface in alignment with each recess on the exterior surface.

REFERENCES:
patent: 4099041 (1978-07-01), Berkman et al.
patent: 4823736 (1989-04-01), Post et al.
patent: 5038711 (1991-08-01), Dan et al.
IBM Technical Disclosure Bulletin, "High-Capacity Narrow Susceptor for Vapor Growth Process", vol. 13, No. 3, Aug. 1970, pp. 804-805.

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