Refractory metal roughness reduction using high temperature anne

Details Refractory metal roughness reduction using high temperature anne Refractory metal roughness reduction using high temperature anne

1996-05-15

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, 438655, 438657, 438669, 438663, H01L 214763

Patent

active

060280026

ABSTRACT:
An embodiment of the present invention teaches a method used in a semiconductor fabrication process to form a memory cell in a semiconductor device comprising the steps of: subjecting a layered structure comprising a silicon gate insulating layer, a conductively doped polysilicon gate layer and a refractory metal silicide gate film to a thermal processing step; forming a sheet resistance capping layer directly on the refractory metal silicide film during at least a period of time of the thermal processing step, the sheet resistance capping layer forming a substantially uniform surface on the refractory metal silicide film; patterning and etching the layered structure to form the transistor gate; forming source and drain regions aligned to apposing sides of the transistor gate and formed into an underlying silicon substrate; and forming a storage capacitor (such as a stacked capacitor or a container cell) connecting to one of the source and drain regions. The thermal processing step is performed in a variety of ambients, such as hydrides oxygen/ozone ambients, for a first portion of the time period. In addition, an organo-silane ambient in the later half of the thermal cycle may also be used.

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