Refractory metal nitride barrier layer with gradient...

Details Refractory metal nitride barrier layer with gradient... Refractory metal nitride barrier layer with gradient...

2005-04-05

2005-04-05

Smith, Brad (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S741000, C257S750000, C438S652000

Reexamination Certificate

active

06876082

ABSTRACT:
Within a microelectronic fabrication and a method for fabricating the microelectronic fabrication a barrier layer is formed over a substrate. Within the method and the microelectronic fabrication the barrier layer is formed of a refractory metal nitride barrier material having within its thickness a gradient in nitrogen concentration. The barrier layer has low resistivity and improved electromigration performance.

REFERENCES:
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patent: 6140231 (2000-10-01), Lin et al.
patent: 6168991 (2001-01-01), Choi et al.
patent: 6174798 (2001-01-01), Hsia et al.
patent: 6268288 (2001-07-01), Hautala et al.
patent: 20030186087 (2003-10-01), Liou et al.

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