Reflowing of a phase changeable memory element to close...

Details Reflowing of a phase changeable memory element to close... Reflowing of a phase changeable memory element to close...

2007-08-23

2009-08-18

Meeks, Timothy H (Department: 1792)

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

C427S331000, C427S554000, C427S097100, C427S097700, C427S098200, C257S002000, C257S003000

Reexamination Certificate

active

07575776

ABSTRACT:
A phase changeable memory element is formed by conformally forming a phase changeable material film in a contact hole on a substrate so as to create a void in the phase changeable material film in the contact hole. A capping film is formed on the phase changeable material film, and the void is at least partially closed by a thermal treatment that is sufficient to reflow the phase changeable material film in the void.

REFERENCES:
patent: 6576318 (2003-06-01), Lee et al.
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patent: 6621096 (2003-09-01), Lee et al.
patent: 7106622 (2006-09-01), Nangle
patent: 2003/0128568 (2003-07-01), Nangle
patent: 2004/0241980 (2004-12-01), Yamazaki et al.
patent: 2006/0049461 (2006-03-01), Schuele et al.
patent: 62097325 (1987-05-01), None
patent: 4-45583 (1992-03-01), None
patent: 10-0276565 (2000-09-01), None

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