Reflection type mask structure and exposure apparatus using the

Details Reflection type mask structure and exposure apparatus using the Reflection type mask structure and exposure apparatus using the

1997-02-18

1999-03-30

Porta, David P.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 34, H01L 2130

Patent

active

058897585

ABSTRACT:
A reflection type X-ray mask structure includes an X-ray absorptive material pattern, an X-ray reflective multilayered film for reflecting X-rays, and a supporting substrate for supporting the X-ray reflective multilayered film, wherein an X-ray reflectivity of a portion other than a pattern region is lower than that of the pattern region. With this reflection type X-ray mask structure, step-and-repeat exposure or step-and-scan exposure with a semiconductor exposure apparatus does not cause undesirable multiple exposure at a boundary portion between juxtaposed exposure regions on a wafer.

REFERENCES:
patent: 5375157 (1994-12-01), Maehara
patent: 5469489 (1995-11-01), Miyake et al.
patent: 5485495 (1996-01-01), Miyachi et al.
patent: 5485497 (1996-01-01), Oizumi et al.
patent: 5553110 (1996-09-01), Sentoku et al.
patent: 5593800 (1997-01-01), Fujioka et al.

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