Reflection photomasks with a capping layer and methods for...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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06998200

ABSTRACT:
A reflection photomask includes a reflection layer on a substrate, an absorber pattern on the reflection layer, and a capping layer on the reflection layer. The capping layer may be selected to decrease a reflectivity of the reflection photomask by less than about 20% of the reflectivity of the reflection layer.

REFERENCES:
patent: 5928817 (1999-07-01), Yan et al.
patent: 5958629 (1999-09-01), Yan et al.
patent: 6013399 (2000-01-01), Nguyen
patent: 6756163 (2004-06-01), Yan
patent: 2002-122981 (2002-04-01), None
Notice to Submit Response; Korean Application No. 10-2002-0021311 (from Korean Patent Office) w/English Translation; Feb. 17, 2004.
Hoshino et al.,Process Scheme for Removing Buffer Layer on Multilayer of EUVL Mask.In Photomask and Next-Generation Lithography Mask Technology VII. Hiroaki Morimoto, Editor, Proceedings of SPIE; vol. 4066 (2000).
Mangat et al.,EUV Mask Fabrication with Cr Absorber,Proceedings of SPIE; vol. 3997; Emerging Lithographic Technologies, IV, ed. E. Dobisz (Mar. 2000).

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