Reflection mass spectrometry technique for monitoring and contro

Details Reflection mass spectrometry technique for monitoring and contro Reflection mass spectrometry technique for monitoring and contro

1990-08-15

1992-12-15

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156611, 156613, 437 81, 437107, 437108, 437133, C30B 2516

Patent

active

051713993

ABSTRACT:
A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate.
The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

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