Reference voltage generator made of BiMOS transistors

Details Reference voltage generator made of BiMOS transistors Reference voltage generator made of BiMOS transistors

1996-10-04

1998-10-06

Wells, Kenneth B.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

327210, 327215, 327219, G11C 700

Patent

active

058182667

ABSTRACT:
A fast data transmission circuit for a semiconductor memory minimizes voltage variations of a data transmission line without the use of a separate data transmission voltage. The data transmission circuit includes a pair of input nodes, a data transmission line pair, a pair of sensing nodes, a pair of output nodes, and a control electrode. Prior to data transmission, the output nodes are pulled up to a high voltage state, the data transmission line pair is pulled down to a low voltage state, and the sensing nodes are held between the high and low voltage states. When the control pulse is applied to the control electrode, the sensing node voltage levels are transferred to the data transmission line pair by the sensing voltage transfer circuit. When one input node is pulled to a low voltage state, a corresponding one voltage level on one transmission line is changed, causing a corresponding change of voltage at one of the sensing nodes. The voltage difference at the sensing nodes causes a corresponding one of the output nodes to go to a low voltage state while the other output node remains at the high voltage state.

REFERENCES:
patent: 4803386 (1989-02-01), Kraus et al.
patent: 4947376 (1990-08-01), Arimoto et al.
patent: 5091885 (1992-02-01), Ohsawa
patent: 5323345 (1994-06-01), Ohsawa

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