Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1989-06-13
1990-07-24
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365203, 365204, 307360, 323313, G11C 700
Patent
active
049439456
ABSTRACT:
Threshold generator for generating half-VDD sensing potential. The threshold generator will precharge all bit lines of a memory array to 1/2-VDD prior to beginning a read of the memory array contents. First and second inverter circuits have threshold voltages selected to represent voltage limits for the bit lines. A voltage drive means is connected to the bit lines along with the inverter circuit inputs. The inverter circuit outputs enable the drive means to supply current or discharge current to and from the bit lines to maintain a voltage potential within the selected voltage limits.
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Bowler Alyssa H.
Hecker Stuart N.
International Business Machines - Corporation
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