Reference voltage generator for ferroelectric memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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Details

C365S065000, C365S136000, C365S189090, C365S203000, C365S210130, C365S214000, C365S230030

Reexamination Certificate

active

06856535

ABSTRACT:
Apparatus and methods are provided for providing reference voltages during read operations in ferroelectric memories, in which a bitline of a reference array substantially similar or identical to a portion of a ferroelectric data array is precharged and then coupled with a bitline in the data array to provide a reference voltage according to a ratio of a number of reference memory cells along the coupled reference bitline to the number of reference memory cells along the coupled reference bitline plus a number of data memory cells along the coupled data bitline.

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