Reference voltage generator for a ferroelectric material memory

Details Reference voltage generator for a ferroelectric material memory Reference voltage generator for a ferroelectric material memory

1998-12-07

2000-06-20

Zarabian, A

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365145, G11C 700

Patent

active

060785306

ABSTRACT:
A reference voltage generator for a ferroelectric materialmemory device alternately stores a reference data stored in one pair of reference cells, and thus enhances a durability of a chip. The reference cell portion is connected between two reference bit lines. It has first and second reference cells to store reference voltages. Precharge portion removes a voltage difference at the first reference cell and a voltage difference at the second reference cell by the process of the precharging operation over the two reference bit lines. Reference bit line equalizer performs a charge division operation over the two reference bit lines. Reference cell data controller is connected between the two reference bit lines for alternately changing data within the first and the second reference cells. Reference cell data control signal generator generates first and second reference cell data control signals to control the operation of the reference cell data controller. As a result, the reference voltage generator reduces a characteristic deterioration caused by a fatigue by alternately changing a polarization status of the reference cells, thereby enhancing a durability of a memory chip.

REFERENCES:
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5663904 (1997-09-01), Arase
patent: 5737260 (1998-04-01), Takata et al.
patent: 5754466 (1998-05-01), Arase
patent: 6026009 (2000-02-01), Choi

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