Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-06-14
2005-06-14
Yoha, Connie C. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S213000, C365S145000, C365S210130
Reexamination Certificate
active
06906975
ABSTRACT:
A reference voltage generating circuit of a non-volatile ferroelectric memory device includes a temperature compensating control circuit that increases and outputs a level of a signal to a reference capacitor node according to an increase in temperature when a reference control signal is at a high level, a plurality of ferroelectric capacitors connected in parallel, each of first electrodes of the plurality of ferroelectric capacitors are commonly connected to a ground voltage terminal and each of second electrodes of the plurality of ferroelectric capacitors are commonly connected to the reference capacitor node, and a plurality of switching blocks controlled by a reference wordline signal, each having drain terminals commonly connected to the reference capacitor node, source terminals connected to a corresponding bitline.
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Kang Hee Bok
Kim Duck Ju
Kye Hun Woo
Park Je Hoon
Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
Yoha Connie C.
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