Reference voltage generating circuit of a semiconductor memory d

Details Reference voltage generating circuit of a semiconductor memory d Reference voltage generating circuit of a semiconductor memory d

1991-04-11

1998-10-06

Berhane, Adolf

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

327538, G05F 316

Patent

active

058182128

ABSTRACT:
A reference voltage generating circuit of a semiconductor memory device including a reference voltage circuit for producing a constant voltage, a differential amplifier for receiving the constant voltage as one input, a MOS transistor with the gate connected to the output of the differential amplifier and with the channel connected between a power supply terminal and a reference voltage output terminal and a voltage divider with an input and output respectively connected to the reference voltage output terminal and the other input of the differential amplifier, is disclosed. The voltage divider has a MOS transistor connected between the reference voltage output terminal and the output and a resistor connected between the output and ground voltage terminal, the MOS transistor being operated in saturation region. The voltage of the reference voltage output terminal is proportional to the constant voltage and inversely proportional to the resistance of the load means, to thereby keep a stable voltage regardless of the variation of the temperature and in manufacturing.

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patent: 5023543 (1991-06-01), Tse
patent: 5028975 (1991-07-01), Nagasawa et al.

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