Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-08-16
2008-09-16
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S211000
Reexamination Certificate
active
07426146
ABSTRACT:
A reference voltage generating circuit for producing a predetermined reference voltage at an output node includes a depletion-type n-channel field-effect transistor serving as a first field-effect transistor having one node thereof coupled to a power supply voltage, a second field-effect transistor having one node thereof coupled to another node of the first field-effect transistor and having a highly-doped n-type gate, and a third field-effect transistor having one node thereof coupled to another node of the second field-effect transistor, another node thereof coupled to a ground voltage, and a highly-doped p-type gate.
REFERENCES:
patent: 5646516 (1997-07-01), Tobita
patent: 6617835 (2003-09-01), Nishimura
patent: 7026863 (2006-04-01), Aota
patent: 2004/0207380 (2004-10-01), Takuya
patent: 54-132753 (1979-10-01), None
patent: 4-65546 (1992-10-01), None
patent: 2001-284464 (2001-10-01), None
Aota Hideyuki
Watanabe Hirofumi
Cooper & Dunham LLP
Phung Anh
Ricoh & Company, Ltd.
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