Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1995-03-28
1996-07-30
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365210, 365226, 327540, 327543, 323313, G11C 700, G05F 320
Patent
active
055418805
ABSTRACT:
To reduce the supply voltage of a nonvolatile memory, a read reference signal is generated having a reference threshold value ranging between the maximum permissible threshold value for erased cells and the minimum permissible threshold value for written cells. To avoid reducing the maximum supply voltage, the characteristic of the read reference signal is composed of two portions: a first portion, ranging between the threshold value and a predetermined value, presents a slope lower than that of the characteristic of the memory cells and a second portion, as of the predetermined value of the supply voltage, presents the same slope as the characteristics of memory cells. The shifted-threshold, two-slope characteristic is achieved by means of virgin cells so biased as to see bias voltages lower than the supply voltage.
REFERENCES:
patent: 4943948 (1990-07-01), Morton
patent: 5003203 (1991-03-01), Win et al.
patent: 5267202 (1993-11-01), Dallabora et al.
patent: 5331599 (1994-07-01), Yero
patent: 5384740 (1995-01-01), Etoh et al.
Golla et al., "30-MSamples/s Programmable Filter Processor," IEEE Journal of Solid-State Circuits, vol. 25(6):pp. 1502-1509, Dec. 1990.
Campardo Giovanni
Dallabora Marco
Ahn Harry K.
Carlson David V.
Dinh Son
Nelms David C.
SGS--Thomson Microelectronics S.r.l.
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