Reference potential generator and a semiconductor memory device

Details Reference potential generator and a semiconductor memory device Reference potential generator and a semiconductor memory device

1997-01-08

1998-10-27

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Differential sensing

365145, 365149, 365203, G11C 702

Patent

active

058286152

ABSTRACT:
A reference potential generator is constituted of two signal lines 21 and 22; a charge supplying means to supply charge to signal lines 21 and 22; a first connection circuit 24a and 24b connecting the charge supplying circuit 23 and two signal lines 21 and 22 in order to supply charge to the two signal lines; and a second connection circuit 25 connecting two signal lines 21 and 22 together by the second control signal, and two signal lines are disconnected after the potentials of the two signal lines determined by the supplied charge and each of load capacitances of signal lines are averaged. A semiconductor memory device of the invention incorporating the above reference potential generator generating an exact reference potential, is able to amplify and output the potential difference between the reference potential and the potential of data readout in the bit line, and by this, "1" or "0" of readout data can be precisely determined.

REFERENCES:
patent: 4363111 (1982-12-01), Heightley et al.
patent: 5010518 (1991-04-01), Toda
patent: 5392234 (1995-02-01), Hirano et al.

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