Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-11-29
2005-11-29
Tran, M. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S191000
Reexamination Certificate
active
06970371
ABSTRACT:
Methods (200) and systems (108) are provided for reading data from ferroelectric memory cells (106) in which charge is removed from a sense amp input (SABL/SABLB) prior to application of a plateline signal (PL) to the target cell capacitor (CFE). Where the sense amp input (SABL/SABLB) is initially precharged to zero volts, the extraction of charge provides a negative voltage on the data bitline (BL/BLB) when the plateline signal (PL) is applied, allowing adequate voltage to be applied across the cell capacitor (CFE) together with reduced plateline voltages (PL).
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McAdams Hugh P.
Summerfelt Scott Robert
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran M.
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