Reference current distribution in MRAM devices

Details Reference current distribution in MRAM devices Reference current distribution in MRAM devices

2005-12-06

2005-12-06

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S210130

Reexamination Certificate

active

06972989

ABSTRACT:
A reference current distribution method and structure thereof for MRAM devices. An MRAM array includes current reference paths with substantially uniform length and resistance for all current paths flowing from the global reference current generator (GRCG) to a plurality of local current generators (LCGs), each LCG being coupled to at least one sub-array. The conductive wire segments that couple the LCGs to the GRCG are positioned such that all reference current path lengths from the GRCG to each LCG are substantially the same, ensuring that the resistance of all reference current paths is substantially the same and the amount of reference current provided by the GRCG to the LCGs is substantially the same. An advantage of an embodiment of present invention may be that the write margin is increased for the MRAM chip.

REFERENCES:
patent: 4990797 (1991-02-01), Real et al.
patent: 5739718 (1998-04-01), Chevroulet
patent: 6490194 (2002-12-01), Hoenigschmid
patent: 6584006 (2003-06-01), Viechmann
patent: 6594176 (2003-07-01), Lammers
patent: 6594191 (2003-07-01), Lammers et al.
patent: 6856565 (2005-02-01), Ooishi et al.
patent: 2002/0018360 (2002-02-01), Hartmann
patent: 2002/0097602 (2002-07-01), Lammers
patent: 1 182 666 (2002-02-01), None

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