Reference cells for TCCT based memory cells

Details Reference cells for TCCT based memory cells Reference cells for TCCT based memory cells

2005-01-18

2005-01-18

Lam, David (Department: 2818)

Static information storage and retrieval

Systems using particular element

Negative resistance

C365S071000, C365S189090

Reexamination Certificate

active

06845037

ABSTRACT:
A reference cell produces a voltage rise on a bit line that is proportional to, and preferably half of, the voltage rise on another bit line produced by a TCCT based memory cell in an “on” state. The reference cell includes an NDR device, a gate-like device disposed adjacent to the NDR device, a first resistive element coupled between the NDR device and the bit line, and a second resistive element coupled between a sink and the bit line. Resistances of the first and second resistive elements are about equal and about twice as much as the resistance of a pass transistor of the a TCCT based memory cell.

REFERENCES:
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patent: 6512690 (2003-01-01), Qi et al.
patent: 20020054502 (2002-05-01), King
Hirando, H., et al., 2V/100-ns 1T/1C Nonvolatile Ferroelectric Memory Architecture with Bitline-Driven Read Scheme and Nonrelaxation Reference Cell, IEEE Journal of Solid-State Circuits, 1997, pp. 649-654, vol. 32, No. 5.

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