Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1997-11-14
1999-09-21
Le, Vu A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 365203, G11C 700
Patent
active
059562668
ABSTRACT:
A reference cell for a 1T/1C ferroelectric memory includes a transistor of a first polarity type having a gate coupled to a reference cell word line, and a current path coupled between a bit line and an internal reference cell node, a transistor of a second polarity type having a gate coupled to a pre-charge line, and a current path coupled between a source of supply voltage and the internal reference cell node, and a ferroelectric capacitor coupled between the internal reference cell node and ground.
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Kraus William F.
Lehman Lark E.
Traynor Steven D.
Wilson Dennis R.
Le Vu A.
Meza Peter J.
Ramtron International Corporation
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