Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1997-11-14
1999-11-16
Nguyen, Viet Q.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 365205, 365207, 365208, G11C 700
Patent
active
059869194
ABSTRACT:
A reference cell layout for use in a 1T/1C ferroelectric memory array includes a transistor of a first polarity type having a gate coupled to a reference word line and a current path coupled between a bit line and an internal cell node, a transistor of a second polarity type having a gate coupled to a pre-charge line and a current path coupled between a source of power supply voltage and the internal cell node, a shunt reference word line extending across the reference cell that is electrically isolated from the reference word line, the pre-charge line and the transistors within the physical boundary of the memory cell, and a ferroelectric capacitor coupled between the internal cell node and a reference plate line.
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Allen Judith E.
Kraus William F.
Lehman Lark E.
Wilson Dennis R.
Burton, Esq. Carol W.
Meza, Esq. Peter J.
Nguyen Viet Q.
Ramtron International Corporation
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