Redundant memory device having a memory cell and electrically br

Details Redundant memory device having a memory cell and electrically br Redundant memory device having a memory cell and electrically br

1991-02-19

1994-04-12

Lee, Benny

Static information storage and retrieval

Read/write circuit

Having fuse element

365 96, 365200, 365149, 257530, 257665, H01L 2170, G11C 1140

Patent

active

053031997

ABSTRACT:
An easily circuit-programmable semiconductor device which comprises a dynamic random access memory (DRAM) unit, a redundancy circuit and a connection between them, the DRAM unit having as a capacitor a dielectric film made of a silicon oxide/silicon nitride/silicon oxide composite layer and the connection having, as a member for programming the redundancy circuit, an electrically breakable dielectric film made of a silicon oxide/silicon nitride/silicon oxide composite layer.

REFERENCES:
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4991137 (1991-05-01), Matsumoto
patent: 5130777 (1992-07-01), Galbraith et al.
IEEE/IRPS '90 186-192 (Oxide-Nitride-Oxide Antifuse Reliability). Chiang et al.

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