Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1996-07-15
1997-06-03
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Bad bit
36523006, 36518908, G11C 2900
Patent
active
056361670
ABSTRACT:
Disclosed are redundancy row/column pretest circuits for a semiconductor memory device. Each of the redundancy row/column pretest circuits comprises a redundancy test pad for supplying a redundancy test signal, and a circuit for generating a normal row or column disable signal in response to the redundancy test signal from the redundancy test pad to disable a normal operation and perform a redundancy operation. Therefore, redundancy row/column cells are operated even under the condition that a redundancy circuit is not programmed, so that faults of the redundancy row/column cells can be tested in the same manner as those of normal cells.
REFERENCES:
patent: 4860260 (1989-08-01), Saito et al.
patent: 4996670 (1991-02-01), Ciraula et al.
patent: 5377146 (1994-12-01), Reddy et al.
patent: 5404331 (1995-04-01), McClure
Kim Hong S.
Lee Ki Y.
Hyundai Electronics Industries Co,. Ltd.
Nguyen Tan T.
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