Redundancy enable circuit capable of achieving increase in repai

Static information storage and retrieval – Read/write circuit – Bad bit

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365222, 3652257, 36523003, G11C 700

Patent

active

055110282

ABSTRACT:
A redundancy enable circuit of a semiconductor memory device, including an address input unit provided with a plurality of repair fuses and a plurality of pass transistors for respectively receiving address signals necessary and unnecessary for a refresh option, the address input unit allowing the necessary ones of the of the address signals to be inputted respectively at corresponding ones of the pass transistors and thereby to control the signal-received pass transistors while preventing the unnecessary ones of the address signals from being inputted respectively at corresponding ones of the pass transistors, whereby an increased repair efficiency is obtained.

REFERENCES:
patent: 5297102 (1994-03-01), Tanizaki
patent: 5359561 (1994-10-01), Sakomura et al.

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