Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1995-02-17
1997-07-01
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Bad bit
365 96, 327526, G11C 700
Patent
active
056445407
ABSTRACT:
An embodiment of the present invention describes a redundancy repair circuit fabricated in a Static Random Access Memory (SRAM) semiconductor device, with the redundancy repair circuit comprising: a plurality of thin film transistors (TFTs); a programming pad connecting to serially connected control gates of the plurality of TFTs; the plurality of TFTs having their individual source/drain terminals connecting between substitution logic and an address multiplexer. The redundancy repair circuit is operated by a method for shifting the threshold voltages of the TFTs using a programming pad connected serially to the control gates of a plurality of TFTs; the plurality of TFTs having their individual output terminals connecting between substitution logic and an address multiplexer; selecting an individual TFT by the address multiplexer; shorting at least one of the output terminals of the selected TFT to approximately a 5 V potential; shorting the output terminals of the remaining (non-selected) TFTs to approximately a 0 V potential; and applying a programming signal to the programming pad, the programming signal is sufficient to cause the threshold voltage of the selected TFT to shift approximately 1 V by injecting electrons into the TFT's gate dielectric region while not effecting the threshold voltage of each individual said non-selected TFTs.
REFERENCES:
patent: 4422161 (1983-12-01), Kressel
patent: 4791615 (1988-12-01), Pelley
patent: 5045720 (1991-09-01), Bae
patent: 5172339 (1992-12-01), Noguchi
patent: 5392245 (1995-02-01), Manning
Mai Son
Micro)n Technology, Inc.
Nelms David C.
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