Redundancy circuit of semiconductor memory device

Details Redundancy circuit of semiconductor memory device Redundancy circuit of semiconductor memory device

1996-07-01

1998-01-27

Nguyen, Tan T.

Static information storage and retrieval

Read/write circuit

Bad bit

36518907, 36523006, G11C 800

Patent

active

057128219

ABSTRACT:
A redundancy circuit of a semiconductor memory device is provided, including: a plurality of repairing word lines for repairing the normal word line connected to a failed cell; a plurality of repairing paths for selecting a random repairing word line of the repairing word lines; and at least one comparing means for enabling at least two repairing word lines in case the respective paths corresponding to the same address on the normal decoding path and the repairing path are simultaneously enabled, whereby the normal word line of the failed cell is simultaneously enabled with at least two repairing word lines.

REFERENCES:
patent: 4723227 (1988-02-01), Murotani
patent: 4817056 (1989-03-01), Furutani et al.
patent: 5289416 (1994-02-01), Iwai et al.
patent: 5297088 (1994-03-01), Yamaguchi
patent: 5517138 (1996-05-01), Baltar et al.
patent: 5539698 (1996-07-01), Suzuki
patent: 5550776 (1996-08-01), Seo et al.
patent: 5579266 (1996-11-01), Tahara

Affiliated with

Also associated with

Rating

Redundancy circuit of semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Redundancy circuit of semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Redundancy circuit of semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-347501